SAN FRANCISCO—ON Semiconductor Corp. has licensed 110-nanometer process technology and associated IP from LSI Corp. to serve as the basis for a new ASIC platform said it offer customers high-density and performance while minimizing non-recurring engineering (NRE) costs and time-to-market, the company said Monday (April 13).
The 110-nm system platform, SP110, delivers better performance and lower power consumption than some mainstream 130-nm technologies and is less expensive than more advanced process nodes, according to ON Semi (Phoenix). The platform features a maximum operating frequency of 450 megahertz, the company said.
With the new system platform, ON Semi is targeting the market for mid-range (over 90-nm) products, particulary for customers in the communications, consumer, industrial, medical and military/aerospace sectors, according to Vince Hopkin, vice president of digital products at ON Semi. While leading-edge devices at 32-nm may grab the headlines, Hopkin said analyst data suggests that more than half of designs today are still 130-nm and above.
"This technology really fits between 90-nm and 130nm and, from a cost perspective, it's very competitive," Hopkin said. "When you start looking at NREs, compared to 130-nm we will be best in class, compared to 90-nm it will be much less."
Hopkin emphasized that the 110-nm devices will be fabbed at the company's facility in Gresham, Ore. This facility, purchased from LSI in 2006, enables ON Semi to run smaller lots than ASIC vendors who use silicon foundries, Hopkin said. The fact that the fab is located in the U.S. is very valuable to some customers, he added.
"That is a big deal," Hopkin said. "I think this on one of the attractive points for ON Semi." Hopkin added that the 110-nm technology would also be used for ON Semi's standard products and application-specific standard products.
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