SAN FRANCISCO—IBM will partner with Japan's JSR Corp. and its U.S. subsidiary to develop new materials and processes for the 32- and 22-nm nodes, the companies said Thursday (Feb. 19).
The partnership will focus on advancing materials JSR has had in development and commercial production, including low-k dielectric solutions and a range of 32- and 22-nm photoresist systems, the companies said.
In a statement, Eric Johnson, president of JSR's U.S. subsidiary, JSR Micro Inc., said the agreement with IBM complements joint R&D the companies are already doing on photoresist.
"JSR has been making extensive progress in non-resist related areas and the partnership with IBM, we feel, is a real validation of that work," Johnson said.
The companies are working to pave the way for the adoption of three new low-k dielectric technologies including new chemical vapor deposition (CVD) low-k materials, novel photo-patternable low-k dielectric materials, and ultra-low-k dielectric materials, they said.
Previous collaboration between IBM and JSR focused on advanced ArF photoresist development and yielded solutions that have been implemented within IBM and throughout the semiconductor industry, the companies said.
The new projects include double patterning advancements and other lithography material challenges for future technology nodes, the companies said.
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