SAN JOSE, Calif. -- Micron Technology Inc. has expanded its efforts in the NAND and mobile DRAM arenas.
As part of those efforts, Micron and its Taiwan DRAM partner, Nanya Technology Corp., have jointly developed low-power DDR2 (LPDDR2) DRAM technology for mobile and consumer applications.
Micron's mobile LPDDR2 portfolio includes 512-Mbit and 1-Gbit die, reaching 4-Gb solutions. The company's LPDDR2 portfolio operates at 1.2-volts, reducing the device's memory power consumption as much as 50 percent as compared to LPDDR1. The devices deliver data transferring speeds of up to 1066-Mb/second.
In addition, Micron is also sampling an ''all-in-one'' NAND-based, multi-chip package (MCP). This includes a 16-GB, multi-level cell (MLC) NAND solution for high-end mobile phones.
The MCP leverages Micron's 32-Gbit, 34-nm MLC NAND technology. Micron's new all-in-one MCP stacks eight die to deliver 16-GBs of available on-board storage, eliminating the need for an external memory card slot.
Specific components of the 16-GB all-in-one solution include e-MMC memory, featuring one controller with four 32-Gb, 34-nm MLC NAND die. It also consists of low-power DDR memory and 2-Gb single-level cell (SLC) NAND.
Micron is currently sampling its 16-GB MCP solution with select mobile handset designers and will be production ready in the first quarter of 2009. Micron is also sampling 4-GB and 8-GB densities of the all-in-one MCP solution, which are currently qualified for commercial production.
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