The XA035 mixed-signal CMOS process, with 0.35-micron minimum design rules, allows lifetime/temperature trade-offs for automotive and other applications with operating temperatures up to 175 degrees Celsius.

The modular 0.35 micrometer process can include high-voltage and non-volatile memory elements. Design support includes the XA035 lifetime calculator, a tool that calculates expected IC lifetime for a given mission profile to help determine lifetime/temperature trade-offs. The process surpasses the AEC-Q100 qualification tests for automotive IC quality and reliability.

The process is a 0.35-micron single-poly, triple-metal N-well CMOS basic process with an absolute maximum of 185 degrees Celsius. It covers voltage ranges from 3.3-V to 45-V. It also comes with small-area EEPROM blocks including a charge pump, meeting automotive quality requirements.

X-FAB offers standard cell libraries optimized for area, speed, low power or low noise; and I/O libraries including ESD support. All libraries take the temperature effects into account.

In addition, XA035 supports parasitic diode modeling. This feature enables pre-layout parasitic diode leakage simulation and lets designers simulate leakages at high temperatures early in the design flow. The new XA035 technology for high-temperature applications is available immediately, the company said.

The process is suitable for integrating discrete-based circuits in sensor frontends and brushless DC motor controls for automotive, industrial, aerospace and military markets.

"We expect the XA035 process with its unprecedented range of support and accurate temperature effect modeling will open new markets for high-temperature engine management applications in the automotive space and for energy-conversion products," said Thomas Hartung, X-Fab's vice president of sales and marketing, in a statement.

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