150-V high-side driver IC provides negative voltage spike immunity for automotive applications

The AUIRS2016S is a high-voltage power MOSFET high-side driver featuring an internal Vs-to-GND recharge NMOS. The device's output driver features a 250 mA high pulse current buffer stage. The channel can be used to drive an N-channel power MOSFET in the high-side configuration, operating up to 150 V above ground. The AUIRS2016S also provides negative voltage spike immunity (-Vs) to protect against catastrophic events during high-current switching and short circuit conditions.

"The AUIRS2016S is a robust, reliable IC designed to meet the rugged performance needs of automotive under-the-hood motor control units, targeting energy-efficient applications such as diesel and gasoline direct fuel injection systems," said Henning Hauenstein, vice president and general manager of IR's Automotive Products Business Unit.

Qualified to AEC-Q100 standards, the AUIRS2016S also offers 5 V compatible logic level inputs, one high-side output and internal low side Vs recharge, CMOS Schmitt trigger inverted input with pull up resistor and CMOS Schmitt trigger inverted reset with pull down resistor.

The new device utilizes IR's advanced high-voltage IC process which incorporates next-generation high-voltage level-shifting and termination technology to deliver superior electrical over-stress protection and higher field reliability.

Specifications

Availability and Pricing

Pricing for the AUIRS2016S begins at US $0.98 each in 100,000-unit quantities. Production orders are available immediately. The automotive-qualified device is lead-free and RoHS compliant.

Datasheet: AUIRS2016S