AMS touts through-silicon via foundry process

The TSV technology allows two eight inch wafers to be electrically connected, and the process has typical TSV depths of 200 to 300 microns.

The parts made using the TSV technology are said to address a host of growing markets, including photo sensors, gas sensors, power devices or MEMS components such as automotive, industrial and consumer applications.

AMS says the process lends itself to significantly reduced form factors and performance improvements due to shortened interconnect lengths. A proprietary back side re-distribution layer concept enables various front and back side IO pad connections and provides customers with utmost flexibility in IC and sensor arrangement.

"This new 3D integration technology further extends our portfolio of industry-leading mixed signal analog and high Voltage technologies and provides customer-specific solutions for sensor integration. The innovative TSV technology can be combined in a fully flexible manner with any of our 0.35 micron analog specialty technologies such as CMOS, HV-CMOS, SiGe BiCMOS or embedded Non-Volatile Memory," said Thomas Riener, General Manager Business Unit Full Service Foundry at Austriamicrosystems (Unterpremstatten, Austria).

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