Sematech validates Applied's low-k film in copper-processing tests

SANTA CLARA, Calif.--Applied Materials Inc. this week said its Black Diamond low-k dielectric film for advanced IC interconnects has passed copper damascene processing tests at International Sematech.

In "ironman" testing, Sematech fabricated level 1 copper interconnects with a damascene process, using the Black Diamond material and Applied Material equipment. The R&D consortium built interconnect structures with etch and chemical mechanical planarization (CMP) tools and processes, required to fabricate chips with copper interconnects, said Applied Materials.

"Sematech's goal in evaluating Black Diamond is to provide member chip makers with information that will enable them to more rapidly integrate low (kappa) dielectrics into their advanced manufacturing processes," said Paul Winebarger, director of interconnect at the Austin, Tex.-based consortium. "The program focused on critical issues, including extensive material characterization, process integration, electrical performance and manufacturability."

Applied Materials introduced Black Diamond in 1998 as a series of low-k films for dielectric constants equal to 2.7 for process feature sizes below 0.10 micron (see July 13, 1998, story). Sematech tested Black Diamond's manufacturing capability was based onmultiple "Ironman" tests, which ran 2,000s run on Applied's' Centura system and 5,000 wafers on the company's Producer chemical vapor deposition (CVD) system.

"A key challenge for the industry is successfully integrating many of the new low (kappa) materials into next-generation multi-level copper damascene device structures," said Farhad Moghadam, corporate vice president and general manager of Applied's Dielectric Systems and Modules Product Group. Moghadam claimed that Black Diamond has not only demonstrated manufacturing capability, but also extendibility to multiple generations of interconnect technologies for a cost-effective, long-term solution.