Samsung sets low-power SRAM roadmap with 0.08-micron process in fabs by 2003

Samsung sets low-power SRAM roadmap with 0.08-micron process in fabs by 2003
SEOUL -- Samsung Electronics Co. Ltd. today announced the start of volume production of low-power 8-megabit SRAMs using a new 0.13-micron process technology. Samsung said it is planning to launch a 16-Mbit version of the low-power SRAM using the 0.13-micron process in the fourth quarter of 2001.

According to the Korean memory maker, the 0.13-micron process moved into volume production three months ahead of schedule. Full-scale fabrication in wafer fabs expected to be achieved in the fourth quarter. The company did not release information on wafer starts or chip volumes planned with the new process.

The low-power 8-Mbit SRAM, designated K6F8016U6B, is aimed at next-generation mobile phones, which need low-power static memories for video, audio and data capabilities, according to Samsung.

Samsung said it is also moving ahead with a 0.10-micron process for low-power SRAM production next year. A 0.08-micron design rule process is slated to be introduced in 2003, said the chip maker.

The company forecasts that the worldwide mobile handset market will maintain an average 15-to-20% per year. Samsung said 380-to-410 handsets will be shipped by cellular phone manufacturers in 2001 and over 1 billion by 2004.

Samsung said it has set its SRAM sales target at $1.8 billion this year and plans to make up 30% worldwide market share by the year 2002.