TSMC picks Applied's low-k for copper ICs, boosting CVD approach

HSINCHU, Taiwan -- After months of evaluations, Taiwan Semiconductor Manufacturing Co. Ltd. today announced it will use Applied Materials Inc.'s chemical vapor deposition (CVD) technology for low-k dielectric insulators in 0.13-micron ICs with copper interconnects.

TSMC's selection of Applied Materials' Black Diamond process appears to toss momentum back into the CVD camp after IBM Corp. tipped the scales in favor of spin-on low-k materials last year. IBM Microelectronics started the copper-interconnect race with its technology disclosure in 1997, and last year, it follow up with its selection of Dow Chemical Co.'s SiLK organic polymer material for spin-on low-k dielectrics in a 0.13-micron copper process generation (see April 3, 2000, story).

After IBM's announcement, many chip companies began to reconsider spin-on dielectrics for their copper ICs. TSMC officials last year said the foundry company was evaluating both CVD and spin-on techniques, but today the Taiwan chip maker tossed its weight behind Applied's chemical vapor deposition materials and tools.

TSMC also said it is working with Applied Materials to extend Black Diamond technology to 0.10-micron (100-nm) devices.

Applied Materials, based in Santa Clara, Calif., has promoted its Black Diamond technology as a viable approach for chip makers wanting to extend existing CVD tool sets while avoiding what the company says are costly proprietary chemicals used with spin-on technologies.

TSMC said it plans to apply the CVD low-k dielectric technology to copper-based ICs in both 200-and 300-mm wafer fabs. "We are also confident in this product's extendibility to multiple generations of devices, including those that will be made in our 300-mm fabs, which will begin volume production this year," said F. C. Tseng, president of TSMC in Hsinchu.

Applied Materials said its Black Diamond CVD technology offers a full range of dielectric constant values of 3.0 to 2.0. The lower values enable chip makers to reduce capacitance in interconnect structures, resulting in higher IC speeds and lower power consumption.

"The Black Diamond technology has achieved several key milestones for us, including its use on every level for eight-level copper integration interconnects," said Shang-Yi Chiang, senior vice president of R&D at TSMC. "We have seen an improvement in interconnect delay of more than 20% over FSG fluorinated silicate glass, with good reliability.

"Black Diamond has demonstrated good thermal and mechanical properties, packaging reliability and cost, all of which contribute to its superior manufacturability compared to low K alternatives," Chiang added.