JMAR thinks it can make X-ray steppers an NGL contender by 2006

SANTA CLARA, Calif. -- While one of the hot topics at this week's SPIE Microlithography conference involves extreme ultraviolet (EUV) technology, JMAR Technologies Inc. was at the event, promoting development of an alternative and possibly lower cost solution, based on X-ray lithography.

JMAR is looking to develop an X-ray stepper for use in chip-processing fabs at the 70-nm (0.07-micron) and 50-nm (0.05-micron) technology nodes, said John Carosella, president of JMAR Research Inc. The operation is the R&D arm of San Diego-based JMAR.

The company aims to ship an X-ray stepper for advanced chip processing in the 2006 time frame, Carosella said. "We are looking at developing a direct-write system that will sell at half the price of EUV," he told SBN.

While EUV is the frontrunner in the race to develop a next-generation lithography (NGL) technology, the price of extreme-ultraviolet tools is a major concern--especially for the first wave of exposure systems for volume production. EUV wavelength tools are being targeted for delivery in the 70-nm node and below, and are expected to be ready for production fabs around 2007, but some industry analysts these systems could cost as much as $40 million each--more than three times the cost of today's most advanced lithography scanners.

But many analysts are somewhat skeptical about the prospects of X-ray lithography for NGL applications. X-ray lithography has been around for several years, but the technology failed to move into mainstream chip production, due to its own high costs, the complexity of the mask sets, and other issues, noted analysts.

However, executives at JMAR believe the company has a good chance to succeed and overcome those past problems with its patented X-ray technology. JMAR--a supplier of semiconductors, lithography light sources, and other products--is no stranger to X-ray technology.

Last year, the company entered the market by acquiring X-ray stepper supplier Semiconductor Advanced Lithography Inc. (SAL) in Burlington, Vt. (see Aug. 8 story). SAL has shipped several of its older-generation X-ray steppers in the marketplace.

While JMAR is developing its tool for the 2006 time frame, the company is also working on new line of X-ray steppers for niche-oriented applications in the short term.

JMAR is currently developing a new, direct-write tool that is designed for processing gallium-arsenide (GaAs) devices and related products.

The stepper, called the XRS2000 NanoPulsar-II System, is a direct-write tool said to process devices at the 130-nm node and beyond. Initial product shipments are slated by the end of 2002 or early 2003.

The company was quick to point out that GaAs devices are not pushing limits in terms of linewidth geometries, as compared to traditional bulk silicon.

"We are looking to enter the market with the XRS2000 at the 130-nm node," Carosella said. "We are aiming the system for compound semiconductor devices."

The XRS2000 will compete against traditional direct-write, electron-beam tools, which are expensive and slow in terms of throughput, said Kenneth Mason, vice president of marketing and sales for the company's X-ray stepper division, dubbed JMAR/SAL NanoLithography Inc., based in Burlington.

Mason said the XRS2000 will be ideal for processing communications chips, especially GaAs and related devices for high-speed, 40- and 80-gigabit-per-second applications.