Micron rolls MCP NAND, mobile DRAMs

As part of those efforts, Micron and its Taiwan DRAM partner, Nanya Technology Corp., have jointly developed low-power DDR2 (LPDDR2) DRAM technology for mobile and consumer applications.

Micron's mobile LPDDR2 portfolio includes 512-Mbit and 1-Gbit die, reaching 4-Gb solutions. The company's LPDDR2 portfolio operates at 1.2-volts, reducing the device's memory power consumption as much as 50 percent as compared to LPDDR1. The devices deliver data transferring speeds of up to 1066-Mb/second.

In addition, Micron is also sampling an ''all-in-one'' NAND-based, multi-chip package (MCP). This includes a 16-GB, multi-level cell (MLC) NAND solution for high-end mobile phones.

The MCP leverages Micron's 32-Gbit, 34-nm MLC NAND technology. Micron's new all-in-one MCP stacks eight die to deliver 16-GBs of available on-board storage, eliminating the need for an external memory card slot.

Specific components of the 16-GB all-in-one solution include e-MMC memory, featuring one controller with four 32-Gb, 34-nm MLC NAND die. It also consists of low-power DDR memory and 2-Gb single-level cell (SLC) NAND.

Micron is currently sampling its 16-GB MCP solution with select mobile handset designers and will be production ready in the first quarter of 2009. Micron is also sampling 4-GB and 8-GB densities of the all-in-one MCP solution, which are currently qualified for commercial production.