SRAF Enhancement using Inverse Lithography for 32 nm Hole Patterning and Beyond

In this paper we propose to make a comparison of the two approaches on random 2D features. We will see that Inverse Lithography permits to keep a sufficient DOF on 2D features configurations where Rule based appears to be limited. Simulated and experimental results will be presented comparing Rule based, Ideal and MRC constraint SRAF in terms of DOF and Runtime performance for hole patterning.